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| Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 s Pulse, 10% Duty 8/9/02 Rev. 1 PH3135-65M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing Absolute Maximum Ratings @ 25 C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 65 3.0 7.7 369 -65 to +200 200 Units V V A W C C Electrical Characteristics @ 25 C Parameter Collector-Emitter Breakdown Collector-Emitter Leakage Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Symbol BVCES ICES RTH(JC) PIN GP Min. 65 7.5 35 6 Max. 7.5 0.42 11.6 2:1 Units V mA C/W W dB % dB IC=40 mA VCE=40 V VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz VCC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz Test Conditions RL VSWR-T Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100s Pulse, 10% Duty PH3135-65M 8/9/02 Rev. 1 Broadband Test Fixture Impedances F (GHz) TEST FIXTURE INPUT CIRCUIT 50 Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50 Z IF () Z OF () 3.10 3.30 3.50 8.9 -j11.2 8.7 -j8.6 8.6 -j6.0 5.2 -j11.0 4.2 -j8.8 4.7 -j7.0 Test Fixture Assembly M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 2 |
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